A Chemically Soldered Polyoxometalate Single-Molecule Transistor

Polyoxometalates have been proposed in the literature as nanoelectronic components, where they could offer key advantages with their structural versatility and rich electrochemistry. Apart from a few studies on their ensemble behaviour (as monolayers or thin films), this potential remains largely unexplored. We synthesised a pyridyl-capped Anderson–Evans polyoxometalate and used it to fabricate single-molecule junctions, using the organic termini to chemically “solder” a single cluster to two nanoelectrodes. Operating the device in an electrochemical environment allowed us to probe charge transport through different oxidation states of the polyoxometalate, and we report here an efficient three-state transistor behaviour. Conductance data fits a quantum tunnelling mechanism with different charge-transport probabilities through different charge states. Our results show the promise of polyoxometalates in nanoelectronics and give an insight on their single-entity electrochemical behaviour.     

金色梦想，一触即发——化学专业校外实践教学基地建设与思考

高等教育要适应世界潮流和时代变化,本科教育须进一步提高实践教学的比重,加强理论教学与实践教学相结合,完善协同育人机制。结合学科发展和企业发展需求,中山大学化学学院与金发科技股份有限公司(简称金发科技)共同建设大学生实践教学基地。本文以中山大学-金发科技本科实践教学基地为例,探讨大学生校外实践基地建设过程中遇到的问题以及实践基地的建设内容与成果体会。     

浸渍吸附法制备Ag-SiO2纳米复合抗菌材料的条件优化

运用浸渍吸附法制备了纳米级单分散Ag-SiO2无机复合抗菌材料,结合响应曲面方法,考察了Ag+浓度、反应时间和氨水添加量等因素对材料抗菌率的影响,考虑到材料制备成本,变色控制等多方面因素,选取了最优制备条件,实验结果表明:Ag+浓度为5.9×10-4 mol·L-1,氨水添加量为4.1 mL,反应时间为5.2 h时,材料有最佳的经济效益和抗菌性能,抗菌率达到91.7;.通过TEM、XRD、ICP和BET方法对材料的结构进行表征,结果表明:载体SiO2微球为无定形态;Ag-SiO2抗菌材料微球具有良好的分散性和稳定性,粒径尺寸均匀;Ag+成功负载于SiO2微球表面,负载量为8.10 mg·kg-1.     

A detailed investigation into the one-pot cascade reaction of ethyl 3,9-dimethyl-7-phenyl-6H-dibenzo-[b,d]pyran-6-one-8-carboxylate with phenylhydrazine

Research on Chemical Intermediates - When synthesizing cyclohexane-annulated pyrazolones from a cyclohexonedicarboxylate derivative with phenylhydrazine under the catalysis of sulfuric acid in the...     

Sustained and Controlled Release of Volatile Precursors for Chemical Vapor Deposition of Graphene at Atmospheric Pressure

Precursors and catalysts play vital roles in chemical reactions. Considerable efforts have been devoted to the investigation of catalysts for graphene growth by chemical vapor deposition in recent years. However, there has been little research on precursors because of a lack of innovation in term of creating a controllable feeding method. Herein, we present a novel sustained and controlled release approach, and develop a convenient, safe, and potentially scalable feeding system with the assistance of matrix materials and a simple portable feeder. As a result, a highly volatile liquid precursor can be fed accurately to grow large-area, uniform graphene films with optimal properties. This feeding approach will further benefit the synthesis of other two-dimensional materials from various precursors.     

Ni、Mo共掺杂对SnO2材料性能影响的仿真研究

针对AgSnO₂触头材料存在的不足,采用基于密度泛函理论的第一性原理对SnO₂、Ni单掺杂、Mo单掺杂以及Ni-Mo共掺杂SnO₂材料进行了电性能与力学性质的研究,计算了各体系的形成能、能带结构、态密度、弹性常数等各项参数。结果表明,掺杂后的材料可以稳定存在,且仍为直接带隙半导体材料。与未掺杂相比,掺杂后体系的能带结构带隙值减少,其中Ni-Mo共掺杂时的带隙值最小,载流子跃迁所需能量减少,极大地改善了SnO₂的电性能;由弹性常数计算了剪切模量、体积模量、硬度等参数,其中Ni-Mo共掺杂时的硬度大幅降低,韧性增强,有利于AgSnO₂触头材料后续加工成型,且其普适弹性各向异性指数最小,不易形成裂纹。综合各项因素,Ni-Mo共掺杂能够很好地改善SnO₂的性能,为触头材料的发展提供了理论指导。     

Y3+/Li+和Y3+/Na+双掺杂氟化钡快响应闪烁晶体

氟化钡(BaF₂)晶体是已知响应最快的闪烁晶体,在高能物理、核物理及核医学等领域有着广泛的应用前景。抑制BaF₂晶体的慢发光成分对其工程应用至关重要。本文利用坩埚下降法制备了高Y³⁺掺杂浓度5%、8%、10%(摩尔分数)的BaF₂晶体,并采用Y³⁺与碱金属离子(Li⁺、Na⁺)共掺杂的方法形成电荷补偿阻止间隙F^-的产生,制备了双掺杂型BaF₂快响应闪烁晶体,进而基于优化的5 ns和2 500 ns时间门宽测试方法,研究了Y³⁺掺杂浓度以及Y³⁺与碱金属离子(Li⁺、Na⁺)共掺杂浓度对BaF₂闪烁晶体快/慢成分比的影响规律。结果表明,生长的高浓度Y³⁺掺杂BaF₂晶体的光学质量优异,在220 nm和300 nm处透过率分别高于90%和92%;随着Y³⁺掺杂浓度由0提高至10%,BaF₂晶体的慢发光成分显著降低,快/慢成分比由0.15提高至1.21;生长的Y³⁺/Li⁺及Y³⁺/Na⁺共掺杂BaF₂晶体的慢发光成分较Y³⁺掺杂BaF₂晶体进一步降低,快/慢成分比最高分别可达1.63和1.61。研制的双掺杂BaF₂快响应闪烁晶体有望应用于高能物理、核物理前沿实验等重要领域。